前驱体材料

BTBAS

双(叔丁基氨基)硅烷 ([NH(C4H9)]2SiH2)

化学式	[NH(C4H9)]2SiH2
中文名称	双(叔丁基氨基)硅烷
英文名称	Bis(t-butylamino)silane
CAS No.	186598-40-3
分子量	174
充装系数
应用	BTBAS是化学蒸气液体化学的前躯体，可沉积均匀的氮化硅。
产品规格	≥99.9999999%

Silicon nitride has many applicaons in device fabricaon  because of its superior barrier properes and oxidaon  resistance. Typically NH3 and Cl2SiH2 mixtures are used to  deposit silicon nitride at near 800°C.  The volale NH4Cl byproduct of this reacon can lead to parcle formaon and  hazy films, and also deposit at the exhaust of the reactor tube. These deposits cause wafer and pump damage. Bis(terarybutylamino)silane (BTBAS) is a liquid chemical precursor for the chemical vapor deposion of uniform silicon nitride, silicon  oxynitride and silicon dioxide films.  The silicon nitride films  obtained using BTBAS are free of chlorine contaminaon at a relavely lower process temperature.